Delay time analysis for 0.4- to 5- mu m-gate InAlAs-InGaAs HEMTs

Author

Enoki, Takatomo ; Arai, Kenta ; Ish, Yasunobu

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

11

Issue

11

fYear

1990

Firstpage

502

Lastpage

504

Abstract

InAlAs-InGaAs HEMTs with 0.4- to 5- mu m gate lengths have been fabricated and a maximum f/sub T/ of 84 GHz has been obtained by a device with a 0.4- mu m gate length. A simple analysis of their delay times was performed. It was found that gradual channel approximation with a field-dependent mobility model with E/sub c/ of 5 kV/cm holds for long-channel devices (L/sub g/>2 mu m), while a saturated velocity model with a saturated velocity of 2.7*10/sup 7/ cm/s holds for short-channel devices (L/sub g/<1 mu m).<>

Keywords

III-V semiconductors; aluminium compounds; delays; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; solid-state microwave devices; 0.4 to 5 micron; 84 GHz; HEMT fabrication; HEMTs; InAlAs-InGaAs; cutoff frequency; delay time analysis; field-dependent mobility model; gate lengths; gradual channel approximation; long-channel devices; saturated velocity model; short-channel devices; Current density; Cutoff frequency; Delay effects; Delay estimation; Equivalent circuits; HEMTs; MODFETs; Probes; Radio frequency; Scattering parameters;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63013

Filename

63013