Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

Author

Chen, T.R. ; Eng, L. ; Zhao, B. ; Zhuang, Y.H. ; Sanders, S. ; Morkoc, H. ; Yariv, Amnon

Author_Institution

Univ. of Electron. Sci. & Technol., China

Volume

26

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1183

Lastpage

1190

Abstract

Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced

Keywords

III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical workshop techniques; semiconductor growth; semiconductor junction lasers; semiconductors; 0.75 mA; 14 mA; 2.4 mA; 7.6 GHz; InGaAs-GaAs; InGaAs-GaAs strained layer quantum-well laser; coated laser; device fabrication; hybrid beam epitaxy; liquid-phase epitaxy; low bias current; low threshold currents; material preparation; modulation bandwidth; single-quantum-well buried-heterostructure lasers; strained-layer diode lasers; submilliamp laser thresholds; uncoated laser; Bandwidth; Epitaxial growth; Gallium arsenide; Laser theory; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Pump lasers; Quantum well lasers; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.59657

Filename

59657