Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

Author

Barraud, S. ; Coquand, R. ; Cassé, M. ; Koyama, M. ; Hartmann, J. -M ; Maffini-Alvaro, V. ; Comboroure, C. ; Vizioz, C. ; Aussenac, F. ; Faynot, O. ; Poiroux, T.

Author_Institution

LETI, Commissariat a l´´Energie Atomique et aux Energies Alternatives, Grenoble, France

Volume

33

Issue

11

fYear

2012

Firstpage

1526

Lastpage

1528

Abstract

In this letter, the electrostatic and the performance of cylindrical silicon nanowire (NW) MOSFETs with an omega-shaped gate and diameters down to 8 nm are investigated. The impact of silicon nitride (SiN) spacer thickness (7, 10, or 15 nm) on short-channel performance is examined. The tradeoff between superior electrostatic confinement and electrical performance, which will be an essential consideration for the design of future NW devices, is clearly observed. Finally, a comparison with trigate NWs shows an improved electrostatic control for a cylindrical-shaped gate, as theoretically expected.

Keywords

MOSFET; electrostatics; nanowires; silicon compounds; SiN; cylindrical-shaped gate; electrostatic confinement; electrostatic control; omega-shaped-gate silicon nanowire MOSFET; size 10 nm; size 15 nm; size 7 nm; size 8 nm; Electrostatics; MOSFET circuits; Nanowires; Scalability; Silicon; Electrostatic confinement; MOSFET; nanowire (NW); omega-gate; scalability; trigate (TG);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2212691

Filename

6303830