Systematic Compact Modeling of Correlated Noise in Bipolar Transistors

Author

Herricht, Jörg ; Sakalas, Paulius ; Ramonas, Mindaugas ; Schroter, Michael ; Jungemann, Christoph ; Mukherjee, Anindya ; Moebus, Kai Erik

Author_Institution

Dept. of Electron. Devices & Integrated Circuits (CEDIC), Tech. Univ. Dresden, Dresden, Germany

Volume

60

Issue

11

fYear

2012

Firstpage

3403

Lastpage

3412

Abstract

A systematic method for the integration of correlated shot-noise sources into compact models (CMs) is presented, which significantly improves the accuracy of predicted high-frequency noise in transistors. The developed method relies on a system theory approach, and hence, is not limited to specific CM or device type. In this paper, the method is applied to the CM HICUM, which serves a vehicle for verification purposes. The method and its implementation were verified for SiGe heterojunction bipolar transistors based on measured data for frequencies up to 50 GHz, as well as on device simulation data up to 500 GHz, obtained from simulations of both hydrodynamic and a Boltzmann transport model.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor device noise; shot noise; Boltzmann transport model; CM HICUM; SiGe; compact models; correlated shot-noise sources; heterojunction bipolar transistors; predicted high-frequency noise; systematic compact modeling; Correlation; Delay; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Noise; Silicon germanium; Boltzmann transport equation (BTE); compact modeling; correlated noise; heterojunction bipolar transistor (HBT); high-frequency (HF) noise; hydrodynamic (HD) model; minimum noise figure (NF);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2216284

Filename

6304942