• DocumentCode
    1287030
  • Title

    Low-threshold and high-temperature operation of InGaAlAs-InP lasers

  • Author

    Chen, T.R. ; Chen, P.C. ; Ungar, J. ; Newkirk, M.A. ; Oh, S. ; Bar-Chaim, N.

  • Author_Institution
    Ortel Corp., Alhambra, CA, USA
  • Volume
    9
  • Issue
    1
  • fYear
    1997
  • Firstpage
    17
  • Lastpage
    18
  • Abstract
    InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T/sub 0/ values as high as 120 K have been measured. These values are the best reported thus far for this material system.
  • Keywords
    Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 120 K; 1300 nm; 3.9 mA; InGaAlAs-InP; InGaAlAs-InP lasers; InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes; high-temperature operation; low-threshold operation; threshold currents; Chemical lasers; Coatings; Diode lasers; Heat sinks; Optical pulses; Reflectivity; Substrates; Temperature distribution; Threshold current; Waveguide lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.554156
  • Filename
    554156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1287030