A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

Author

Strollo, Antonio G M

Author_Institution

Dipartimento di Ingegneria Elettronica, Naples Univ., Italy

Volume

12

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

12

Lastpage

20

Abstract

A new SPICE subcircuit model for power p-i-n diodes is proposed in this paper. The model is based on a moment-matching approximation of the ambipolar diffusion equation. It is shown that both the quasistatic model and the lumped charge model can be obtained as ion-order moment-matching approximations while new and more accurate models can be obtained from higher-order solutions. The proposed model takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery, showing good convergence properties and fast simulation times. Comparisons between the results of the SPICE model and both numerical device simulations and experimental results are presented

Keywords

SPICE; p-i-n diodes; power semiconductor diodes; semiconductor device models; SPICE subcircuit model; ambipolar diffusion equation; asymptotic waveform evaluation; base conductivity modulation; computer simulation times; convergence properties; emitter recombination; highly doped end regions; ion-order moment-matching approximations; lumped charge model; moving-boundaries effect; power p-i-n diodes; quasistatic model; reverse-recovery; Charge carrier processes; Electron mobility; Knee; Laplace equations; P-i-n diodes; Predictive models; SPICE; Semiconductor diodes; Spontaneous emission; Voltage;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/63.554165

Filename

554165