Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources

Author

Floyd, P.D. ; Treat, D.W. ; Bour, D.P.

Author_Institution

Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA

Volume

35

Issue

24

fYear

1999

fDate

11/25/1999 12:00:00 AM

Firstpage

2120

Lastpage

2121

Abstract

Arrays of integrated red, infrared and blue light emitters fabricated using wafer fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures are demonstrated. Successful operation of red and infrared lasers fused to functioning GaN LEDs has been achieved. Infrared, AlGaInAs QW lasers (4×500 μm) operating with a threshold current (I_th) of 40 mA and external differential quantum efficiency (n_d) of 11.5%/facet at ~821 nm are shown. Red, GaInP QW lasers (4×500 μm) operating with an I_th of 118 mA and η_d of 18.7/facet at ~660 nm are also shown. The adjacent InGaN/GaN LED emits at 446 nm

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; integrated optics; light emitting diodes; quantum well lasers; semiconductor laser arrays; 11.5 percent; 118 mA; 18.7 percent; 40 mA; 446 nm; 660 nm; 821 nm; AlGaInP; AlInGaAs; GaN light emitting diode heterostructure; InGaN-GaN; array; blue light emitter; external differential quantum efficiency; heterogeneous integration; infrared AlInGaAs QW laser; infrared light emitter; red light emitter; threshold current; visible AlGaInP QW laser; wafer fusion;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19991456

Filename

815932