• DocumentCode
    1288207
  • Title

    Improving thermal stability of shallow junctions by N2 + pre-implantation

  • Author

    Yang, Wen Luh ; Wu, Wen-Fa ; Liu, Don-Gey ; Hung, Tung-Ching ; Tseng, Fu Yuan

  • Author_Institution
    Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan
  • Volume
    35
  • Issue
    24
  • fYear
    1999
  • fDate
    11/25/1999 12:00:00 AM
  • Firstpage
    2143
  • Lastpage
    2145
  • Abstract
    A highly thermally stable shallow p+/n junction has been fabricated. it was found that N2+ pre-implantation can lead to a significant stabilisation of CoSi2 films during high temperature annealing. TEM delineation results confirm that the CoSi2 film remains smooth and uniform with the N2+ pre-implantation while agglomeration occurs on the non-N2+-implanted sample
  • Keywords
    annealing; cobalt compounds; ion implantation; p-n junctions; thermal stability; transmission electron microscopy; CoSi2; CoSi2 film; N2; N2+ pre-implantation; SADS process; TEM; high temperature annealing; shallow p+/n junction; silicide-as-diffusion-source; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19991428
  • Filename
    815947
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1288207