Spatial distribution of state densities dominating strain sensitivity of carbon nanotubes

In any electronic devices and sensors, internal strain is induced because of the thermal change or the lattice mismatch between different materials. It is, therefore, expected that when carbon nanotubes (CNTs) are used for electronic devices, their electronic properties are changed caused by the deformation. In this study, we study the mechanism of the change in the band gap of CNTs under the radial strain in terms of state density distribution. We found that the spatial distribution of the state density dominates its strain sensitivity, and thus, the strain sensitivity of electronic properties of CNTs. We also calculated the change in the current through the deformed CNTs. The founding indicates that the state density analysis should be useful for the development of novel electronic devices and nano electro mechanical systems and for assuring their reliable performance.