DocumentCode
128861
Title
Optimization of program and erase characteristics of two bit flash memory P-channel cell structure using TCAD
Author
Hayashi, H. ; Axelrad, Valery ; Mochizuki, Marie ; Hayashi, Teruaki ; Maruyama, Tetsuhiro ; Suzuki, Kenji ; Nagatomo, Yoshiki
Author_Institution
Device Technol. Dev. Div., LAPIS Semicond. Co., Ltd., Yokohama, Japan
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
169
Lastpage
172
Abstract
This paper presents the optimization of the two bit flash memory P-channel cell structure using efficient 2D write and erase model. Our proposed cell structure stores charge at either Source and/or Drain sides of the gate in an SiN film and is based on method of programming by DAHE and erasing by FN tunneling. It is found that expansion of cell window and the improvement of erase characteristic depend on the optimization of the gate-film overlap under gate of the SiN film.
Keywords
flash memories; logic design; silicon compounds; technology CAD (electronics); 2D write and erase model; DAHE; FN tunneling; SiN; TCAD; flash memory P-channel cell structure; Data models; Films; Logic gates; Optimization; Programming; Silicon compounds; Tunneling; Flash Memory; P-Channel; SONOS; TCAD; Two-Bit;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931590
Filename
6931590
Link To Document