A three-dimensional TCAD system focused on power and nano-scaled devices applications

Author

Ookura, Yasuyuki ; Kato, Nei ; Kobayashi, Shin-ichi ; Kuwabara, Takuhito ; Harada, Masaaki ; Yamaguchi, Kazuhiro ; Koike, Hideaki

Author_Institution

AdvanceSoft Co., Tokyo, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

197

Lastpage

200

Abstract

A new 3-D TCAD system has been proposed aiming close coupling of first-principles calculator, process, and device simulators in response to requirements for ultra-small to high-power semiconductor devices. Using the first-principles calculator Schottky-barrier height has been derived. In the process simulator, a robust and high-speed topographical algorithm has been newly proposed and thus easier handling of complicated 3-D structure has been provided. And a 3-D effect due to arsenic deactivation has been demonstrated. In the device simulator, robust calculation for high-voltage breakdown characteristics of wide-gap devices has been demonstrated.

Keywords

Schottky barriers; ab initio calculations; power MOSFET; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); MOSFET; Schottky-barrier height; arsenic deactivation; first-principles calculator; high-power semiconductor devices; high-voltage breakdown characteristics; nanoscaled devices applications; three-dimensional TCAD system; topographical algorithm; wide-gap devices; Calculators; Crystals; Radiative recombination; Robustness; Semiconductor device modeling; Silicon carbide; 3-D TCAD; Schottky-barrier height; device simulator; easier handling; first-principles calculator; process simulator; topographical algorithm;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931597

Filename

6931597