Electromigration in solder bumps: A mean-time-to-failure TCAD study

Author

Ceric, H. ; Zisser, W.H. ; Rovitto, M. ; Selberherr, Siegfried

Author_Institution

Christian Doppler Lab. for Reliability Issues in Microelectron., Inst. for Microelectron., Linz, Austria

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

221

Lastpage

224

Abstract

The mechanical and electrical properties of solder bumps influence the overall reliability of 3D ICs. A characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation is enhanced by electromigration and leads to the formation of voids which can cause a complete failure of a solder bump. In this paper we present a compact model for prediction of the mean-time-to-failure of solder bumps under the influence of electromigration.

Keywords

electromigration; failure analysis; integrated circuit reliability; solders; technology CAD (electronics); three-dimensional integrated circuits; voids (solid); 3D IC reliability; compositional transformation; electrical properties; electromigration; material composition changes; mean-time-to-failure TCAD study; mechanical properties; solder bump characteristic; voids; Current density; Electromigration; Mathematical model; Resistance; Semiconductor process modeling; Stress; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931603

Filename

6931603