DocumentCode
128903
Title
BTB tunneling in InAs/Si heterojunctions
Author
Filipovic, Lado ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Kosina, Hans
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2014
fDate
9-11 Sept. 2014
Firstpage
245
Lastpage
248
Abstract
This works presents a study of the location of 3D band-to-band tunneling barriers in order to create improved tunneling devices. Specifically, the i-Si/n-InAs junction is considered. The large lattice mismatch in this material system causes dislocations in the interface and traps in the bandgap. Alternative device configurations are considered that move the tunneling away from the physical interface, therefore reducing the the effects of lattice mismatch on tunneling current.
Keywords
III-V semiconductors; dislocation structure; energy gap; indium compounds; semiconductor heterojunctions; silicon; tunnelling; 3D band-to-band tunneling barriers; BTB tunneling devices; InAs-Si; InAs-Si Heterojunctions; band gap; dislocations; i-Si-n-InAs junction; lattice mismatch; material system; physical interface; tunneling current; Heterojunctions; Logic gates; Photonic band gap; Silicon; Three-dimensional displays; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on
Conference_Location
Yokohama
ISSN
1946-1569
Print_ISBN
978-1-4799-5287-8
Type
conf
DOI
10.1109/SISPAD.2014.6931609
Filename
6931609
Link To Document