Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate

Author

Endoh, Akira ; Watanabe, Issei ; Kasamatsu, Akifumi ; Mimura, Takashi

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

261

Lastpage

264

Abstract

We carried out Monte Carlo (MC) simulation of In_0.52Al_0.48As/In_0.53Ga_0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; electrodes; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device breakdown; HEMT; InAlAs-InGaAs; Monte Carlo simulation; buried gate; electric field; electron velocity; gate electrode; high electron mobility transistors; Electric fields; Electric potential; Foot; HEMTs; Logic gates; MODFETs; Shape; Buried gate; Electric field; Electron velocity; Gate length; HEMTs; InAlAs; InGaAs; Monte Carlo simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931613

Filename

6931613