3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity

Author

Wang, Lingfeng ; Brown, A.R. ; Nedjalkov, M. ; Alexander, C. ; Cheng, Binjie ; Millar, C. ; Asenov, Asen

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

269

Lastpage

272

Abstract

A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic´ simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.

Keywords

MOSFET; semiconductor device models; thermal conductivity; 3D coupled electrothermal FinFET simulations; FinFET DC operation; GARAND; Poisson equations; SOI FinFET; atomistic simulator; bulk FinFET; coupled electrothermal simulation; coupled heat flow; current continuity equations; fin height; fin width; phonon-boundary scattering; reduced thermal conductivity; self heating; thermal simulation module; Conductivity; FinFETs; Heating; Lattices; Mathematical model; Thermal conductivity; Thermal resistance; FinFET; self-heating effects; thermal conductivity; thermal effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931615

Filename

6931615