Simultaneous simulation of systematic and stochastic process variations

Author

Lorenz, Juergen ; Bar, Eberhard ; Burenkov, Alex ; Evanschitzky, P. ; Asenov, Asen ; Wang, Lingfeng ; Wang, Xiongfei ; Brown, A.R. ; Millar, C. ; Reid, Dave

Author_Institution

Fraunhofer Inst. for Integrated Syst. & Device Technol. (IISB), Erlangen, Germany

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

289

Lastpage

292

Abstract

An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third-party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.

Keywords

circuit simulation; stochastic processes; circuit level; hierarchical simulation sequence; stochastic process variations; systematic process variations; third-party tools; Integrated circuit modeling; Lithography; Resource description framework; Semiconductor device modeling; Stochastic processes; Systematics; Transistors; LER; MGG; RDF; device simulation; equipment simulation; etching; lithography; process simulation; process variations; statistical variations; systematic variations;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931620

Filename

6931620