Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength

It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and used it to demonstrate the essential excitonic superfluid transport physics which underlies the proposed BiSFET in presence of such a condensate. Here we report on extension of that work to analyze dependencies on device scaling and the condensate strength of BiSFET performance and required device parameters including interlayer conductance, and critical current and voltage.