Electron-phonon interaction in Si nanowire devices: Low field mobility and self-consistent EM NEGF simulations

Author

Mil´nikov, Gennady ; Mori, Nobuya

Author_Institution

Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

317

Lastpage

320

Abstract

The paper presents a method for quantum transport simulations in nanowire (NW) MOSFETs with inelastic scattering processes incorporated. An atomistic tight-binding Hamiltonian with realistic electron-phonon interaction is transformed into an equivalent low-dimensional transport model which can be easily used in full-scaled NEGF simulations. The utility of the method is demonstrated by computing IV characteristics in n-Si NW devices.

Keywords

Green´s function methods; MOSFET; electron-phonon interactions; elemental semiconductors; nanowires; scattering; silicon; IV characteristics; NW MOSFET; Si; atomistic tight-binding Hamiltonian interaction; equivalent low-dimensional transport model; full-scaled simulations; inelastic scattering processes; low field mobility; nanowire devices; nonequilibrium Green function; quantum transport simulations; realistic electron-phonon interaction; self-consistent EM NEGF simulations; Charge carrier processes; Computational modeling; Couplings; Mathematical model; Phonons; Scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931627

Filename

6931627