MOSFET substrate current model for circuit simulation

Author

Arora, Narain D. ; Sharma, Mahesh S.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

Volume

38

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1392

Lastpage

1398

Abstract

A simple, accurate MOSFET substrate current model suitable for a circuit simulator is presented. The effect of substrate bias on substrate current is modeled without introducing additional parameters. The accuracy of this model is demonstrated by its ability to fit the experimental data for both standard and LDD devices with average errors of less than 6%. The new model is compared with the substrate current models reported in the literature. In addition, the temperature dependence of the substrate current in the range of 0-120°C is also modeled. The new model has been implemented in a circuit-level hot-electron reliability simulator, and the results obtained from simulation of an inverter circuit are presented

Keywords

circuit CAD; circuit analysis computing; insulated gate field effect transistors; semiconductor device models; 0 to 120 C; LDD devices; MOSFET substrate current model; circuit simulation; circuit-level hot-electron reliability simulator; inverter circuit; substrate bias; substrate current; temperature dependence; Circuit simulation; Degradation; Hot carriers; Intrusion detection; Inverters; MOSFET circuits; Predictive models; SPICE; Temperature dependence; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.81631

Filename

81631