• DocumentCode
    1289425
  • Title

    Theory of band-to-band tunneling under nonuniform electric fields for subbreakdown leakage currents

  • Author

    Takayanagi, Mariko ; Iwabuchi, Shuichi

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    6/1/1991 12:00:00 AM
  • Firstpage
    1425
  • Lastpage
    1431
  • Abstract
    A new expression for the band-to-band tunneling in the presence of a nonuniform electric field is derived, with emphasis on the importance of the exact evaluation of integrals over wave vectors of a tunneling electron. Nonuniformity of the electric field is taken into account in calculating the interband matrix element, although it is neglected in the electronic wave functions. Nonuniformity of the electric field tends to decrease the tunneling rate. The new expression shows a different electric field dependence from E.O. Kane´s (1959, 1961) tunneling rate especially in high electric fields. The appropriate evaluation of wave-vector integrations and the consideration of the spatial dependence of the electric field are indispensable to obtaining a correct electric-field dependence of the tunneling rate
  • Keywords
    insulated gate field effect transistors; leakage currents; semiconductor device models; tunnelling; MOSFETs; band-to-band tunneling; electric-field dependence; electronic wave functions; exact evaluation of integrals; high electric fields; interband matrix element; models; nonuniform electric fields; spatial dependence; subbreakdown leakage currents; tunneling electron; tunneling rate; wave-vector integrations; Breakdown voltage; Electric breakdown; Electrons; Erbium; Leakage current; Nonuniform electric fields; Random access memory; Silicon devices; Tunneling; Wave functions;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.81635
  • Filename
    81635