Compact modeling of carrier trapping for accurate prediction of frequency dependent circuit operation

Author

Oodate, Yuhei ; Tanimoto, Yuta ; Tanoue, Hiroshi ; Kikuchihara, Hideyuki ; Miyamoto, Hideaki ; Mattausch, Hans Jurgen ; Miura-Mattausch, M.

Author_Institution

Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2014

fDate

9-11 Sept. 2014

Firstpage

329

Lastpage

332

Abstract

We have investigated the influence of carrier traps on device characteristics in TFTs. In particular, our focus was given on transient characteristics influenced by carrier trapping during device operations. A compact model for circuit simulation of TFTs has been developed by considering the time constant of the trapping. The model was verified with measured frequency dependent TFT characteristics.

Keywords

semiconductor device models; thin film transistors; carrier trapping; carrier traps; circuit simulation; device characteristics; device operations; frequency dependent TFT characteristics; frequency dependent circuit operation; thin film transistors; time constant; transient characteristics; Current measurement; Electron traps; Frequency measurement; Integrated circuit modeling; Thin film transistors; Transient analysis; TFTs; carrier traps; compact model; surface potential; transient charactersitics;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2014 International Conference on

Conference_Location

Yokohama

ISSN

1946-1569

Print_ISBN

978-1-4799-5287-8

Type

conf

DOI

10.1109/SISPAD.2014.6931630

Filename

6931630