Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics

Author

Sakai, Tatsuo ; Yachi, Toshiaki

Author_Institution

NTT Appl. Electron. Lab., Tokyo, Japan

Volume

38

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

1510

Lastpage

1515

Abstract

Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics are described. The gate-oxide thickness of the device is 34 nm. The device has a radiation tolerance of 2×10⁵ rad, which is four times higher than that of 100-nm gate-oxide device. Although the thin gate oxide increases input capacitance, reverse transfer capacitance is reduced by using the VDMOSFET cell structure with an additional p region. The VDMOSFET is suitable as a switching device for high-frequency switching power supplies used in communication satellites

Keywords

gamma-ray effects; insulated gate field effect transistors; power transistors; radiation hardening (electronics); switched mode power supplies; 2E5 rad; 34 nm; MOSFETs; VDMOSFET cell structure; additional p region; gamma-ray irradiation effects; gate-oxide thickness; high-frequency switching power supplies; input capacitance; radiation tolerance; reverse transfer capacitance; switching device; thin-gate-oxide VDMOSFET characteristics; Artificial satellites; Capacitance; Communication switching; Degradation; Electric variables; Frequency; Helium; Power supplies; Switching circuits; Transformers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.81647

Filename

81647