• DocumentCode
    1290681
  • Title

    Electron Trap Profiling Near \\hbox {Al}_{2} \\hbox {O}_{3} /Gate Interface in TANOS Stack Using Gate-Side Trap Spectroscopy by Charge Injection and Sensing

  • Author

    Zahid, M.B. ; Arreghini, A. ; Degraeve, R. ; Govoreanu, B. ; Suhane, A. ; Van Houdt, J.

  • Author_Institution
    IMEC, Leuven, Belgium
  • Volume
    31
  • Issue
    10
  • fYear
    2010
  • Firstpage
    1158
  • Lastpage
    1160
  • Abstract
    The goal of this letter is to investigate and characterize the defects at the Al2O3/gate interface in TANOS memory stacks. To this purpose, gate-side trap spectroscopy by charge injection and sensing is applied on devices featuring different metal gates and different postdeposition anneals. The results show that a high concentration of defect is present in crystalline samples with a TaN or TiN gate.
  • Keywords
    alumina; charge injection; electron traps; elemental semiconductors; random-access storage; silicon; silicon compounds; tantalum compounds; titanium compounds; TANOS memory stacks; TaN-Al2O3-Si3N4-SiO2-Si; TiN-Al2O3-Si3N4-SiO2-Si; charge injection; charge sensing; charge-trapping nonvolatile memories; defect concentration; electron trap profiling; gate-side trap spectroscopy; Aluminum oxide; Annealing; Charge measurement; Current measurement; Density measurement; Electron traps; Logic gates; Silicon; Spectroscopy; Tin; Voltage; Voltage measurement; $hbox{Al}_{2}hbox{O}_{3}$; TANOS; trap profiling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2057239
  • Filename
    5545357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1290681