DocumentCode
1291075
Title
Operations of polyphase resonant converter-modulators at the Korean Atomic Energy Research Institute
Author
Reass, W.A. ; Baca, D.M. ; Bland, M.J. ; Gribble, R.F. ; Kwon, H.J. ; Cho, Y.S. ; Kim, D.I. ; Mccarthy, J. ; Clark, K.B.
Author_Institution
Los Alamos Nat. Lab., Los Alamos, NM, USA
Volume
18
Issue
4
fYear
2011
fDate
8/1/2011 12:00:00 AM
Firstpage
1104
Lastpage
1110
Abstract
This paper presents operational data and parameters of the newest generation of polyphase resonant high voltage converter modulator (HVCM) as developed and delivered to the KAERI 100 MeV "PEFP" accelerator. The KAERI design realizes improvements from the SNS and SLAC designs. The present KAERI system operates two parallel THALES TH2089F 350 MHz klystrons with total power draw of 50 amperes at 105 kV. An additional 3 klystron system operating at 105 kV and 75 A is also being considered for the high energy sections of this accelerator. In these systems, to improve the IGBT switching performance, the HVCMs will be fitted with artificial zero-voltage-switching (ZVS) networks at turn-off. This new method of artificial ZVS should result in a 6 fold reduction of IGBT switching losses. This will improve the HCVM conversion efficiency to better than 95% at full average power, which is 500 kW for the 2 klystron system and 750 kW for the 3 klystron system. The artificial ZVS is accomplished by placing a soft switching capacitor network across the resonant boost transformer primary winding. This low loss snubber circuit reduces the dv/dt across the IGBTs at turn-off. As the transformer input busswork is extremely low inductance (<;10 nH), the single network acts like it is across each IGBT collector-emitter terminal of the 4 transistor H-bridge switching network. We will review these topological improvements and the overall system as delivered to the KAERI accelerator with details of the installed operational results.
Keywords
klystrons; power semiconductor switches; resonant power convertors; switched capacitor networks; transformer windings; zero voltage switching; HVCM; IGBT collector-emitter terminal; IGBT switching performance; KAERI PEFP accelerator; Korean Atomic Energy Research Institute; SLAC designs; SNS designs; THALES TH2089F klystrons; ZVS networks; artificial ZVS W. networks; artificial zero-voltage-switching networks; current 50 A; current 75 A; electron volt energy 100 MeV; frequency 350 MHz; polyphase resonant converter-modulators; power 500 kW; power 750 kW; resonant boost transformer primary winding; soft switching capacitor network; transistor H-bridge switching network; voltage 105 kV; Capacitors; Inductance; Insulated gate bipolar transistors; Klystrons; Power transformer insulation; Switches; Zero voltage switching; IGBT; Nanocrystalline transformer; Power conditioning; modulator; resonant converter;
fLanguage
English
Journal_Title
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher
ieee
ISSN
1070-9878
Type
jour
DOI
10.1109/TDEI.2011.5976102
Filename
5976102
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