Development of a 15 kV bridge rectifier module using 4H-SiC junction-barrier schottky diodes

To demonstrate higher efficiency and more compact high-voltage power conversion systems, a 15 kV full-bridge rectifier module has been developed by the U.S. Army Research Laboratory. The module utilizes 15 kV, 3 A silicon carbide junction-barrier Schottky diodes manufactured by CREE Inc. In this paper, we will present the analyses, design, and characterization of this module using conventional materials and processes and introduce a novel technique to reduce electric field stress and associated failure modes.