DocumentCode
1291462
Title
A novel low noise IMPATT diode
Author
Herbert, D.C. ; Davies, R.G.
Author_Institution
DERA Electron. Sector, Malvern, UK
Volume
47
Issue
1
fYear
2000
fDate
1/1/2000 12:00:00 AM
Firstpage
197
Lastpage
206
Abstract
IMPATT diodes are currently the main solid state source of power at the higher millimeter-wave frequencies, but can suffer from high noise levels, low efficiency and low reliability, particularly when driven for high power. In the present paper a new concept is proposed which can yield essentially noise free avalanche multiplication at high frequency and should improve both efficiency and reliability. The proposed structures require a layer of narrow gap material adjacent to a wide gap avalanche zone
Keywords
IMPATT diodes; avalanche breakdown; millimetre wave diodes; narrow band gap semiconductors; power semiconductor diodes; semiconductor device noise; IMPATT diode; avalanche multiplication; efficiency; high power diodes; millimeter-wave frequencies; narrow gap material; noise levels; reliability; wide gap avalanche zone; Circuits; Diodes; Frequency; Gallium arsenide; Noise level; Optical noise; Optical resonators; Optical saturation; Power generation; Thermal conductivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.817586
Filename
817586
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