DocumentCode
1292163
Title
Modeling GaAs/AlGaAs devices: A critical review
Author
Bennett, Herbert S.
Author_Institution
NBS, Gaithersburg, MD, USA
Volume
1
Issue
1
fYear
1985
Firstpage
35
Lastpage
44
Abstract
Device models for GaAs devices and GaAs/AlGaAs heterostructures are much less advanced than those for silicon devices. The author critically reviews recent advances in the modeling of GaAs/AlGaAs devices. The review is based on an examination of five selected device models that contain features common to the majority of device models for heterostructure bipolar and field effect transistors. Areas requiring improved measurement techniques on processed GaAs and improved physical concepts for GaAs/AlGaAs devise models are identified.
Keywords
III-V semiconductors; aluminium compounds; bipolar transistors; field effect transistors; gallium arsenide; p-n heterojunctions; reviews; semiconductor device models; FET; GaAs/AlGaAs devices; III-V semiconductors; bipolar devices; field effect transistors; heterostructures; modeling; review; Computational modeling; Equations; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MODFETs; Mathematical model;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.1985.6311922
Filename
6311922
Link To Document