DocumentCode
1293265
Title
Phase noise degradation at high oscillation amplitudes in LC-tuned VCO´s
Author
Samori, C. ; Lacaita, A.L. ; Zanchi, A. ; Levantino, S. ; Cali, G.
Author_Institution
Dipt. di Elettronica Inf., Politecnico di Milano, Italy
Volume
35
Issue
1
fYear
2000
Firstpage
96
Lastpage
99
Abstract
This paper deals with the Single Sideband to Carrier Ratio (SSCR) dependence on the oscillation amplitude of a fully integrated LC-tuned voltage-controlled oscillator, fabricated in high-speed bipolar technology. As the oscillation amplitude increases, the SSCR reaches a minimum and then steeply rises, setting a limit to the range where better performance can be traded against higher power dissipation. This dependence is fully explained by taking into account that noise and disturbances modulate the phase delay due to the active elements. Experimental and simulation procedures for the evaluation of this effect are presented and their impact on the circuit performance is discussed.
Keywords
bipolar analogue integrated circuits; circuit tuning; high-speed integrated circuits; integrated circuit noise; phase noise; voltage-controlled oscillators; LC-tuned VCO; active element; high-speed bipolar IC; phase delay; phase noise; power dissipation; single sideband to carrier ratio; voltage controlled oscillator; Circuit noise; Degradation; Low-frequency noise; Noise level; Phase noise; Photonic band gap; Power dissipation; Signal to noise ratio; Voltage; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.818924
Filename
818924
Link To Document