Charge deposition modeling of thermal neutron products in fast submicron MOS devices

Author

Zhu, X.W. ; Massengill, L.W. ; Cirba, C.R. ; Barnaby, H.J.

Author_Institution

Dept. Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA

Volume

46

Issue

6

fYear

1999

Firstpage

1378

Lastpage

1385

Abstract

Ground-based thermal neutron reaction products (/spl alpha/, /sup 7/Li) appear to be an important terrestrial SEE concern for modern submicron technologies. We address some interesting spatial and temporal characteristics of neutron products. Accurate modeling of the temporal behavior of these products may be required for high-speed devices. In addition, we introduce a simulation methodology that determines device sensitivity to neutron reaction products as a function of neutron nuclear reaction location and the resulting ion track orientation.

Keywords

MOS integrated circuits; VLSI; circuit simulation; high-speed integrated circuits; integrated circuit modelling; integrated circuit reliability; neutron effects; charge deposition modeling; device sensitivity; fast submicron MOS devices; high-speed devices; ion track orientation; neutron nuclear reaction location; reliability; simulation methodology; spatial characteristics; temporal characteristics; terrestrial SEE concern; thermal neutron products; Alpha particles; Boron; Circuits; Delay; MOS devices; Neutrons; Particle tracking; Silicon; Space technology; USA Councils;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819096

Filename

819096