• DocumentCode
    1293905
  • Title

    Proton mobility in a-SiO/sub 2/

  • Author

    Kurtz, Henry A. ; Karna, Shashi P.

  • Author_Institution
    Dept. of Chem., Memphis State Univ., TN, USA
  • Volume
    46
  • Issue
    6
  • fYear
    1999
  • Firstpage
    1574
  • Lastpage
    1577
  • Abstract
    A model for proton mobility in a-SiO/sub 2/ is developed. Theoretical first-principles calculations are performed to test this model by obtaining pathways and activation energies for proton motion.
  • Keywords
    amorphous state; hopping conduction; ionic conductivity; silicon compounds; SiO/sub 2/; activation energies; amorphous state; first-principles calculations; proton hopping; proton mobility; tunnelling; Annealing; Chemistry; Nonvolatile memory; Performance evaluation; Physics; Protons; Quantum mechanics; Surges; Testing; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.819123
  • Filename
    819123