DocumentCode
1293988
Title
Study of dose effects on IGBT-type devices subjected to gamma irradiation
Author
Marceau, M. ; Brisset, C. ; da Costa, M.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Volume
46
Issue
6
fYear
1999
Firstpage
1680
Lastpage
1685
Abstract
This document describes the characterization tests performed on an IGBT transistor, International Rectifier model IRGP450UD2. It also provides an analysis of IGBT behavior, using an electrical model and a PSPICE simulator.
Keywords
SPICE; gamma-ray effects; insulated gate bipolar transistors; radiation hardening (electronics); semiconductor device models; semiconductor device testing; IGBT transistor; IGBT-type devices; International Rectifier model IRGP450UD2; PSPICE simulator; characterization tests; dose effects; electrical model; gamma irradiation; Bipolar integrated circuits; Circuit testing; Gamma rays; Insulated gate bipolar transistors; MOSFET circuits; Neutrons; Performance evaluation; Power system modeling; Radiation hardening; Rectifiers;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.819138
Filename
819138
Link To Document