Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors

Author

Dorfan, D. ; Dubbs, T. ; Grillo, A.A. ; Ipe, N.E. ; Mao, S. ; Rowe, W. ; Sadrozinski, H.F.-W. ; Seiden, A. ; Spencer, E. ; Stromberg, S. ; Wichmann, R.

Author_Institution

SCIPP, California Univ., Santa Cruz, CA, USA

Volume

46

Issue

6

fYear

1999

Firstpage

1884

Lastpage

1890

Abstract

We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest dose to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing high dose rate data is demonstrated.

Keywords

annealing; bipolar transistors; colliding beam accelerators; dosimetry; gamma-ray effects; nuclear electronics; proton accelerators; synchrotrons; 200 krad; LHC; Large Hadron Collider; annealing; bipolar transistors; current gain; dose rate dependence; gamma dose rates; maximum dose; radiation induced damage; Annealing; Bipolar transistors; Circuits; Current measurement; Gain measurement; Large Hadron Collider; Linear accelerators; Radiation detectors; Silicon radiation detectors; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819246

Filename

819246