Evaluation of radiation damaged p-in-n and n-in-n silicon microstrip detectors

Author

Unno, Y. ; Yamashita, Takayoshi ; Terada, S. ; Kohriki, T. ; Moorhead, G. ; Iwata, Y. ; Takashima, R. ; Ikeda, M. ; Kitayama, E. ; Sato, K. ; Kondo, T. ; Ohsugi, T. ; Nakano, I. ; Fukunaga, C. ; Phillips, P.W. ; Robinson, D. ; Johansen, L.G. ; Riedler, P.

Author_Institution

Inst. of Particle & Nucl. Studies, High Energy Accel. Res. Organ., Tsukuba, Japan

Volume

46

Issue

6

fYear

1999

Firstpage

1957

Lastpage

1963

Abstract

Two p-in-n and one n-in-n silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the p-in-n and the n-in-n in high resistivity wafers, and the p-in-n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-in-n and the p-in-n detectors, which suggested that the signals were shared between strips more in the irradiated p-in-n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beam test results.

Keywords

capacitance measurement; proton effects; silicon radiation detectors; capacitance measurement; charge collection; high resistivity wafer; low resistivity wafer; n-in-n Si microstrip detector; p-in-n Si microstrip detector; proton irradiation; radiation damage; Conductivity; Genetic mutations; Laboratories; Microstrip components; P-n junctions; Physics; Radiation detectors; Silicon radiation detectors; Strips; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.819262

Filename

819262