DocumentCode
1294658
Title
58-72 GHz CMOS wideband variable gain low-noise amplifier
Author
Kim, Sungho ; Kim, Hyun-Chang ; Kim, Do-Hyeon ; Jeon, Sanggeun ; Kim, Marn-Go ; Rieh, Jae-Sung
Author_Institution
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Volume
47
Issue
16
fYear
2011
Firstpage
904
Lastpage
906
Abstract
A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58-72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60-70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P-1dB was measured to be -22.1 dBm. DC power consumption is 36 mW with VDD = 1.2 V and the chip size is 0.75 × 0.65 mm.
Keywords
CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; CMOS wideband variable gain low-noise amplifier; DC power consumption; RFCMOS technology; V-band wideband variable gain low-noise amplifier; frequency 58 GHz to 72 GHz; gain control; noise figure; power 36 mW; size 65 nm; tuning voltage; voltage 1.2 V;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.1741
Filename
5980023
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