• DocumentCode
    1294658
  • Title

    58-72 GHz CMOS wideband variable gain low-noise amplifier

  • Author

    Kim, Sungho ; Kim, Hyun-Chang ; Kim, Do-Hyeon ; Jeon, Sanggeun ; Kim, Marn-Go ; Rieh, Jae-Sung

  • Author_Institution
    Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
  • Volume
    47
  • Issue
    16
  • fYear
    2011
  • Firstpage
    904
  • Lastpage
    906
  • Abstract
    A V-band wideband variable gain low-noise amplifier (VGLNA) with a 3 dB bandwidth of 14 GHz (58-72 GHz) is developed in a 65 nm RFCMOS technology. The three-stage VGLNA, adopting the current steering method for the gain control, shows a measured peak power gain of 21.8 dB with a 1 dB gain flatness of 10 GHz (60-70 GHz). With tuning voltage adjusted from 0.8 to 2.8 V, the gain and noise figure are varied from 21.8 to 12.8 dB and from 4.2 to 5.7 dB, respectively, at 64 GHz. Input P-1dB was measured to be -22.1 dBm. DC power consumption is 36 mW with VDD = 1.2 V and the chip size is 0.75 × 0.65 mm.
  • Keywords
    CMOS analogue integrated circuits; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; CMOS wideband variable gain low-noise amplifier; DC power consumption; RFCMOS technology; V-band wideband variable gain low-noise amplifier; frequency 58 GHz to 72 GHz; gain control; noise figure; power 36 mW; size 65 nm; tuning voltage; voltage 1.2 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.1741
  • Filename
    5980023