Growth and metallization of AlGaAs/GaAs carbon-doped HBTs using trimethylamine alane by CBE

Author

Chiu, T.H. ; Kuo, T.Y. ; Fonstad, Clifton G.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

287

Lastpage

289

Abstract

It is shown that the entire structure of high-quality AlGaAs/GaAs heterojunction bipolar transistors (HBTs) including a nonalloyed delta -doped ohmic contact and in-situ Al metallization can be grown by chemical beam epitaxy (CBE) using a new precursor, trimethylamine alane, as the Al source. The graded Al/sub x/Ga/sub 1-x/As and uniform GaAs bases (both approximately 1000 A thick) are doped with carbon to high 10/sup 19/ cm/sup -3/ using trimethyl-Ga. A current gain of 10 at a current density of 2500 A/cm/sup 2/ is obtained for both uniform- and graded-base HBTs. Both devices show good output characteristics.<>

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor growth; 1000 A; Al source; AlGaAs-GaAs; AlGaAs:C base; CBE; GaAs:C base; chemical beam epitaxy; current density; current gain; graded-base HBTs; in-situ Al metallization; metallization; nonalloyed delta -doped ohmic contact; output characteristics; precursor; semiconductors; trimethylamine alane; uniform base HBTs; Carbon dioxide; Chemicals; Contamination; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Metallization; Molecular beam epitaxial growth; Semiconductor materials; Temperature sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82063

Filename

82063