Effects of electric field on the exciton linewidth broadening due to scattering by free carriers in semiconducting quantum-well structures

Author

Koh, Tong San ; Feng, Yuan Ping ; Spector, Harold N.

Author_Institution

Dept. of Phys., Nat. Univ. of Singapore, Singapore

Volume

33

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1774

Lastpage

1778

Abstract

The effects of an applied electric field perpendicular to the well layers on the broadening of the exciton linewidth due to scattering by free carriers in semiconducting quantum well (QW) structures is theoretically investigated based on a finite confining potential model. The dependence of the free carrier-exciton linewidth broadening on carrier concentration, temperature, and well width are calculated and discussed for various electric field strengths. It is found that the influence of the electric field on the linewidth broadening is appreciable in wide wells, while in narrow wells little change is shown even in the presence of a strong electric field

Keywords

III-V semiconductors; aluminium compounds; carrier density; electro-optical effects; excitons; gallium arsenide; semiconductor quantum wells; spectral line broadening; GaAs-GaAlAs; GaAs-GaAlAs QW; carrier concentration; electric field effect; exciton linewidth broadening; finite confining potential model; free carrier scattering; free carrier-exciton linewidth broadening; semiconducting quantum-well structures; temperature dependence; well width dependence; Absorption; Acoustic scattering; Excitons; Ionization; Optical modulation; Optical scattering; Particle scattering; Physics; Quantum wells; Semiconductivity;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.631282

Filename

631282