Electron trapping in irradiated SIMOX buried oxides

Author

Ouisse, Thierry ; Cristoloveanu, Sorin ; Borel, Gerard

Author_Institution

Thomson-TMS, Saint-Egreve, France

Volume

12

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

312

Lastpage

314

Abstract

Presented are new results of X-ray exposure of silicon-on-insulator devices fabricated on SIMOX (separation by implantation of oxygen) substrates. It is shown that the presence of numerous electron traps in the buried oxide may dominate the back-gate threshold voltage shift of strongly irradiated SIMOX transistors. A rebound effect occurs under a negative oxide field, due to the trapping of negative charges rather than to interface states generation. Irradiated transistors also show an increased sensitivity to hot-carrier effects.<>

Keywords

X-ray effects; electron traps; hot carriers; insulated gate field effect transistors; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; MOSFETs; SOI devices; X-ray exposure; back-gate threshold voltage shift; electron trapping; increased sensitivity to hot-carrier effects; irradiated SIMOX buried oxides; irradiated SIMOX transistors; negative oxide field; rebound effect; trapping of negative charges; Annealing; Argon; Degradation; Electron traps; Inspection; Interface states; MOSFETs; Silicon on insulator technology; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.82071

Filename

82071