Low-voltage superlattice asymmetric Fabry-Perot reflection modulator

Author

Law, K.-K. ; Coldren, L.A. ; Merz, J.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

324

Lastpage

326

Abstract

A normally off transverse superlattice asymmetric Fabry-Perot modulator that has a contrast ratio of more than 26:1 at the Fabry-Perot resonance, and a reflection change of 33% at a wavelength of approximately 20 degrees AA away from Fabry-Perot mode for an operating voltage swing of <3 V is discussed. The structure contains an active region of 52 periods of a 30 AA GaAs-30 AA Al/sub 0.3/Ga/sub 0.7/As superlattice, embedded between top and bottom quarter-wave grating mirrors. The modulation is achieved by reducing the cavity loss at the Fabry-Perot resonance through the field-induced effective absorption edge blue-shift in the superlattice.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; light reflection; optical modulation; semiconductor superlattices; 30 AA; Fabry-Perot resonance; GaAs-Al/sub 0.3/Ga/sub 0.7/As; cavity loss; contrast ratio; field-induced effective absorption edge blue-shift; operating voltage swing; quarter-wave grating mirrors; reflection change; semiconductor; superlattice asymmetric Fabry-Perot reflection modulator; Absorption; Fabry-Perot; Mirrors; Optical interconnections; Optical modulation; Optical reflection; Reflectivity; Resonance; Superlattices; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82100

Filename

82100