Low-voltage high-gain resonant-cavity avalanche photodiode

Author

Kuchibhotla, Ravi ; Srinivasan, Anand ; Campbell, Joe C. ; Lei, Chun ; Deppe, Dennis G. ; He, Yue Song ; Streetman, Ben G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

354

Lastpage

356

Abstract

For p-i-n photodiodes and avalanche photodiodes (APDs) in the low-gain regime, there is a performance tradeoff between the transit-time contribution to the bandwidth and the quantum efficiency. A new photodetector structure is demonstrated that alleviates limitations imposed by this tradeoff. This structure utilizes a thin ( approximately=900 AA) depleted absorbing layer to reduce the transit time and achieve avalanche gain at low bias voltage (V/sub b/ approximately=9 V). The external quantum efficiency has been enhanced ( eta /sub e/>49%) by incorporating the structure into a resonant cavity.<>

Keywords

avalanche photodiodes; 49 percent; 9 V; avalanche gain; bandwidth; depleted absorbing layer; external quantum efficiency; high-gain resonant-cavity avalanche photodiode; light absorption; low bias voltage; low-voltage photodiodes; p-i-n photodiodes; photodetector structure; quantum efficiency; transit-time contribution; Absorption; Avalanche photodiodes; Bandwidth; Gallium arsenide; Low voltage; Optical attenuators; Optical sensors; PIN photodiodes; Photodetectors; Resonance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82110

Filename

82110