Noise suppression characteristics of InP-based monolithically integrated guided wave balanced photodiodes

Author

Pamulapati, J. ; Bhattacharya, P.K. ; Biswas, D. ; McCleer, P.J. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

3

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

357

Lastpage

359

Abstract

Measurements were made of the noise suppression and signal enhancement properties of dual In/sub 0.53/Ga/sub 0.47/As-InP metal-semiconductor-metal (MSM) photodiodes integrated with a leaky mode In/sub 0.52/Al/sub 0.48/As waveguide directional coupler, and an electro-optic phase shifter. The experiments were done with a 1.3- mu m laser as the local oscillator. A noise suppression of 11 dB and signal enhancement of 1.3 dB were recorded for the MSM photodiodes.<>

Keywords

III-V semiconductors; electron device noise; gallium arsenide; indium compounds; integrated optics; metal-semiconductor-metal structures; photodiodes; 1.3 micron; In/sub 0.52/Al/sub 0.48/As; In/sub 0.53/Ga/sub 0.47/As-InP; InP-based monolithically integrated guided wave balanced photodiodes; MSM photodiodes; electro-optic phase shifter; leaky mode In/sub 0.52/Al/sub 0.48/As waveguide directional coupler; local oscillator; metal-semiconductor-metal; noise suppression; semiconductors; signal enhancement; Directional couplers; Laser modes; Laser noise; Lasers and electrooptics; Noise measurement; Phase measurement; Phase noise; Phase shifters; Photodiodes; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.82111

Filename

82111