DocumentCode
1298395
Title
Low threshold current operation of 1.3 μm narrow beam divergence tapered-thickness waveguide lasers
Author
Yamamoto, T. ; Kobayashi, H. ; Ishikawa, T. ; Takeuchi, T. ; Watanabe, T. ; Fujii, T. ; Ogita, S. ; Kobayashi, M.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
33
Issue
1
fYear
1997
fDate
1/2/1997 12:00:00 AM
Firstpage
55
Lastpage
56
Abstract
Low threshold current operation of 1.3 μm narrow beam divergence tapered-thickness waveguide lasers is demonstrated by high-reflection coating to both facets and optimising the gain region length. A 320 μm long laser which consisted of 120 μm long gain region and 200 μm lone tapered waveguide showed low threshold currents of 3.2 mA at 25°C and 10.5 mA at 85°C as well as FWHM beam divergence of <10°. These threshold currents are the lowest data ever reported among spot-size transformer integrated lasers, to the authors´ knowledge
Keywords
laser beams; semiconductor lasers; waveguide lasers; 1.3 micron; 25 to 85 C; 3.2 to 10.5 mA; FWHM beam divergence; diode laser; gain region length; high-reflection coating; spot-size transformer integrated laser; tapered-thickness waveguide laser; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970051
Filename
555079
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