A single-chip Si-bipolar 1.6-GHz VCO with integrated-bias network

Author

Zennoth, M. ; Fenk, J. ; Springer, A. ; Weigel, R.

Author_Institution

Semicond. Div., Siemens AG, Munich, Germany

Volume

48

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

203

Lastpage

205

Abstract

A single-chip 2.7-V voltage-controlled oscillator (VCO) with an integrated-bias network has been implemented in an Si-bipolar process with an f_T of 25 GHz. With an on-chip resonator consisting of vertically coupled inductors and varactor diodes, an oscillation frequency of 1.56 GHz was measured. A careful design of the oscillator and bias network was necessary to achieve a phase noise performance of -139 dBc/Hz at 4.7 h MHz off carrier. The tuning sensitivity was 100 MHz/V, which is sufficient to compensate for production tolerances. The VCO can be used as a building block for single-chip transceivers in digital European cordless telephone or global system for mobile communication systems

Keywords

UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; circuit tuning; cordless telephone systems; elemental semiconductors; integrated circuit design; mobile radio; phase noise; silicon; transceivers; voltage-controlled oscillators; 1.56 to 1.6 GHz; 2.7 V; 25 GHz; Si; Si bipolar VCO; building block; digital cordless telephones; integrated-bias network; mobile communication; onchip resonator; phase noise performance; single-chip UHF VCO; single-chip transceivers; tuning sensitivity; varactor diodes; vertically coupled inductors; voltage-controlled oscillator; Diodes; Frequency measurement; Inductors; Phase noise; Production; Telephony; Transceivers; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.821760

Filename

821760