• DocumentCode
    1298814
  • Title

    Monolithically integrated 16-channel 1.55 μm pin/HBT photoreceiver array with 11.5 GHz bandwidth

  • Author

    Yang, Kun ; Zhang, Xiaobing ; Haddad, G.I. ; Bhattacharya, Pallab

  • Volume
    33
  • Issue
    1
  • fYear
    1997
  • fDate
    1/2/1997 12:00:00 AM
  • Firstpage
    82
  • Lastpage
    83
  • Abstract
    A 16-channel InP-based (λ=1.55 μm) monolithically integrated photoreceiver array is realised with an average channel bandwidth of 11.5 GHz and adjacent channel crosstalk of <-35 dB with both dual bias design and the incorporation of metal shields
  • Keywords
    III-V semiconductors; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical crosstalk; optical receivers; p-i-n photodiodes; wavelength division multiplexing; 1.55 micron; 11.5 GHz; 16-channel configuration; InP; OEIC; PIN/HBT photoreceiver array; WDM applications; adjacent channel crosstalk; channel bandwidth; dual bias design; metal shields; monolithically integrated photoreceiver array;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970029
  • Filename
    555101