• DocumentCode
    1298999
  • Title

    Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM

  • Author

    Correas, V. ; Saigné, F. ; Sagnes, B. ; Wrobel, F. ; Boch, J. ; Gasiot, G. ; Roche, P.

  • Author_Institution
    STMicroelectronics Technol. R&D Technol. Line Manage., STMicroelectronics, Crolles, France
  • Volume
    56
  • Issue
    4
  • fYear
    2009
  • Firstpage
    2050
  • Lastpage
    2055
  • Abstract
    The PHISco simulation tool was known to be able to predict the SEU cross section for incident ions. This tool is improved in this work to also predict the MCU rate. Experimental and predicted results are shown to be in good agreement on a 90 nm bulk SRAM. The simulated SRAM structure includes the N-well, which is known to be a barrier to the charge carriers.
  • Keywords
    SRAM chips; PHISco simulation tool; SRAM; charge carriers; diffusion-collection model; multiple cell upset; size 90 nm; Charge carriers; Electrodes; Error correction codes; MOSFETs; Predictive models; Random access memory; Research and development; Research and development management; Single event upset; Technology management; Diffusion-collection model; N-well; PHISco; multiple cell upset; single event upset; source electrode;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2013622
  • Filename
    5204555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1298999