Lower limit of method for the extraction of ionization coefficients from the electrical characteristics of heterojunction bipolar transistors

Author

Shamir, N. ; Ritter, D.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

488

Lastpage

490

Abstract

The error contributed by the Early effect to the ionization coefficient obtained from the characteristics of heterojunction bipolar transistors (HBTs) is calculated. For the case of InP-GaInAs HBTs, the Early effect does not introduce a significant error at low electric fields. For the case of HBTs with Ga_0.28In_0.72As _0.61P_0.39 (λ=1.3 μm) base and collector, the Early effect introduces a relatively large error at low electric fields, A procedure for correcting this error is outlined. It is found that the low field ionization coefficient in Ga_0.28In_0.72As_0.61P_0.39 exhibits an anomalous low field behavior, similar to that of Ga_0.47In_0.53As

Keywords

field ionisation; heterojunction bipolar transistors; impact ionisation; semiconductor device breakdown; Early effect; Ga_0.28In_0.72As_0.61P_0.39; Ga_0.47In_0.53As; HBT; InP-GaInAs; anomalous low field behavior; electrical characteristics; heterojunction bipolar transistors; ionization coefficients extraction; low electric fields; Electric breakdown; Electric variables; Electrons; Equations; Error correction; Gain measurement; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822298

Filename

822298