DocumentCode
1299772
Title
Development of 4-Sides Buttable CdTe-ASIC Hybrid Module for X-ray Flat Panel Detector
Author
Tamaki, Mitsuru ; Mito, Yoshio ; Shuto, Yasuhiro ; Kiyuna, Tatsuya ; Yamamoto, Masaya ; Sagae, Kenichi ; Kina, Tooru ; Koizumi, Tatsuhiro ; Ohno, Ryoichi
Author_Institution
ACRORAD Co., Ltd., Uruma, Japan
Volume
56
Issue
4
fYear
2009
Firstpage
1791
Lastpage
1794
Abstract
A 4-sides buttable CdTe-ASIC hybrid module suitable for use in an X-ray flat panel detector (FPD) has been developed by applying through silicon via (TSV) technology to the readout ASIC. The ASIC has 128 times 256 channels of charge integration type readout circuitry and an area of 12.9 mm times 25.7 mm. The CdTe sensor of 1 mm thickness, having the same area and pixel of 100 mum pitch, was fabricated from the Cl-doped CdTe single crystal grown by traveling heater method (THM). Then the CdTe pixel sensor was hybridized with the ASIC using the bump-bonding technology. The basic performance of this 4-sides buttable module was evaluated by taking X-ray images, and it was compared with that of a commercially available indirect type CsI(Tl) FPD. A prototype CdTe FPD was made by assembling 9 pieces of the 4-sides buttable modules into 3 times 3 arrays in which the neighboring modules were mounted on the interface board. The FPD covers an active area of 77 mm times 39 mm. The results showed the great potential of this 4-sides buttable module for the new real time X-ray FPD with high spatial resolution.
Keywords
X-ray detection; X-ray imaging; application specific integrated circuits; image sensors; nuclear electronics; position sensitive particle detectors; silicon radiation detectors; solid scintillation detectors; 4-sides buttable module; ASIC hybrid module; CdTe sensor; CsI(Tl) scintillator plate; FPD; THM; X-ray flat panel detector; X-ray images; bump-bonding technology; pixel detector; readout circuitry; silicon devices; size 1 mm; spatial resolution; traveling heater method; Application specific integrated circuits; Assembly; Prototypes; Silicon; Spatial resolution; Thermal sensors; Through-silicon vias; X-ray detection; X-ray detectors; X-ray imaging; CdTe; X-ray imaging; four-sides buttable; through-silicon-via;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2009.2024417
Filename
5204690
Link To Document