DocumentCode
1299837
Title
Microelectromechanical tuneable filters with 0.47 nm linewidth and 70 nm tuning range
Author
Tayebati, P. ; Wang, P. ; Vakhshoori, D. ; Sacks, R.N.
Author_Institution
CoreTek Inc., Burlington, MA, USA
Volume
34
Issue
1
fYear
1998
fDate
1/8/1998 12:00:00 AM
Firstpage
76
Lastpage
78
Abstract
Microelectromechanical filters were fabricated by selective oxidation of AlAs layers in a GaAlAs/AlAs Fabry-Perot structure and by removing the GaAs sacrificial layer. The device exhibits a 3 dB linewidth of 0.47 nm, a tuning range of more than 70 nm and <1 dB insertion loss. The structure exhibits frequency response of 500 kHz at a 3 dB cutoff point
Keywords
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; electro-optical filters; gallium arsenide; micromechanical devices; oxidation; tuning; 1 dB; 500 kHz; AlAs layer; GaAlAs-GaAs; GaAlAs/AlAs Fabry-Perot structure; GaAs sacrificial layer; cutoff point; frequency response; insertion loss; linewidth; microelectromechanical tuneable filter; selective oxidation; tuning range;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19980033
Filename
654532
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