20-Mb/s erase/record flash memory by asymmetrical operation

Author

Kawahara, Takayuki ; Jyouno, Yusuke ; Saeki, Syun-ichi ; Miyamoto, Naoki ; Kimura, Katsutaka

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

Volume

33

Issue

1

fYear

1998

fDate

1/1/1998 12:00:00 AM

Firstpage

119

Lastpage

125

Abstract

An asymmetrical recording and erasing operation of Flash memory is proposed where the threshold voltage of erase and record states are set above the thermal equilibrium threshold voltage. The recording rate is made ten times faster by using this method along with two other proposed methods: accurate control of the fastest bit and continuous recording using two memory banks. The erasing rate is also made ten times faster by using large-scale parallel operation made practical by a proposed multiphase word-driving scheme. These proposed circuit technologies will enable 20-Mb/s erase/record Flash memories for use in personal high-definition television (HDTV) movie cameras

Keywords

EPROM; integrated memory circuits; 20 Mbit/s; asymmetrical operation; circuit technology; erase/record flash memory; multiphase word-driving; parallel operation; personal HDTV movie camera; threshold voltage; Circuits; Digital cameras; Flash memory; HDTV; Laboratories; Motion pictures; Random access memory; TV; Threshold voltage; Tunneling;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.654943

Filename

654943