Experimental verification of calculated IGBT losses in PFCs

Author

Masserant, B. ; Stuart, T.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Toledo Univ., OH, USA

Volume

32

Issue

3

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

1154

Lastpage

1158

Abstract

Measurements of insulated gate bipolar transistor (IGBT) losses in modulated converters present a difficult challenge because of the wide variations in the waveform. As an alternative, earlier references (1994, 1995) provided a means of calculating these losses from out-of-circuit test data, but no experimental verification was presented. To provide this verification, this present study compares these calculated losses with measured losses obtained from the temperature rise of the heat sink of the IGBT. These experimental results agree quite well with the earlier loss calculations, and the largest deviation for four test cases is less than 4%.

Keywords

heat sinks; insulated gate bipolar transistors; loss measurement; power factor correction; temperature measurement; IGBT losses; calculated losses; heat sink; insulated gate bipolar transistor; loss calculations; measured losses; modulated converters; out-of-circuit test data; power factor controller; temperature rise; Current measurement; Frequency measurement; Heat sinks; Insulated gate bipolar transistors; Loss measurement; Resistance heating; Switching loss; Temperature; Temperature measurement; Testing; Thermal resistance; Voltage;

fLanguage

English

Journal_Title

Aerospace and Electronic Systems, IEEE Transactions on

Publisher

ieee

ISSN

0018-9251

Type

jour

DOI

10.1109/7.532276

Filename

532276