Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs

We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25°C and 125°C, at bias conditions: gate voltage V_gs = -2& V and drain voltage V_ds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at V_gs = -2 V and V_ds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.